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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. CHDTA113TKPT CURRENT 100 m A m p er e FEATURE * Small surface mounting type. (SOT-23) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Internal isolated PNP transistors in one package. Built in bias resistor(R1=1.0k, Typ. ) SOT-23 .041 (1.05) .033 (0.85) (1) .110 (2.80) .082 (2.10) .066 (1.70) .119 (3.04) (3) CONSTRUCTION * One PNP transistors and bias of thin-film resistors in one package. (2) .055 (1.40) .047 (1.20) MARKING * R1 E B 2 1 .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) CIRCUIT .045 (1.15) .033 (0.85) TR R1 .019 (0.50) 3 C Dimensions in inches and (millimeters) SOT-23 LIMITING VALUES In accordance with the Absolute Maxim Rating System (IEC um 60134). SYMBOL VCBO VCEO VEBO IC(Max.) PD TSTG TJ RJ-S Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-12 PARAMETER Coll ector -Base voltage Collector-Emitter voltage Emitter-Base voltage Coll ector current Power dissipation Storage temperature Junction temperature Thermal resistance , Note 1 CONDITIONS -50 -50 -5 VALUE V V V mA UNIT -100 Tamb 25 OC, Note 1 200 -55 +150 -55 +150 junction - soldering point 140 mW O C O C C/W O RATING CHARACTERISTIC ( CHDTA113TKPT ) CHARA CTERISTICS Tamb = 25 C unless otherwise specied. SY MBOL BVCBO BVCEO BVEBO VCE(sat) ICBO IEBO hFE R1 fT PARAMETER Collector-Base breakdown voltage Emitter-Base breakdown voltage Collector-Emitter Saturation voltage Collector-Base current Emitter-Base current DC current gain Input resistor Transition frequency CONDITIONS IC= -50uA IE= -50uA IC= -5mA; IB= -0.25mA VCB= -50V VEB= -4V IC= -1mA; VCE= -5.0V IE=5mA, VCB= -10.0V f=100MHz = MIN. -50.0 -50.0 -5.0 - - - 100 0.7 - - - - - - - 250 1.0 250 TY P . - - - -0.3 -0.5 -0.5 600 1.3 - K MHz MAX. V V V V uA uA UNIT Collector-Emitter breakdown voltage IC= -1mA Not e 1.Pulse test: tp300uS; 0.02. RATING CHARACTERISTIC CURVES ( CHDTA113TKPT ) Typical Electrical Characteristics 1k 500 DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.1 DC current gain vs. collector current VCE=-5V Ta=100OC 25OC -40 C O Fig.2 Collector-emitter saturation voltage vs. collector current -1 -500m -200m -100m -50m -20m -10m -5m -2m -1m -100u -500u -1m -5m -10m -50m -100m 100OC 25OC -40 OC lC/lB=10 200 100 50 20 10 5 2 1 -100 -500 -1m -5m -10m -50m -100m COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) |
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